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The Cuban Sandwich: A History in Layers

為了解決Sandwich sandwiches的問題，作者Huse, Andrew T.,Cruz, Bárbara C.,Houck, Jeff 這樣論述：

A delicious, multilayered tale of a legendary sandwich How did the Cuban sandwich become a symbol for a displaced people, win the hearts and bellies of America, and claim a spot on menus around the world? The odyssey of the Cubano begins with its hazy origins in the midnight cafés of Havana, from wh

ere it evolved into a dainty high-class hors d’oeuvre and eventually became a hearty street snack devoured by cigar factory workers. In The Cuban Sandwich, three devoted fans--Andrew Huse, Bárbara Cruz, and Jeff Houck--sort through improbable vintage recipes, sift gossip from Florida old-timers, and

wade into the fearsome Tampa vs. Miami sandwich debate (is adding salami necessary or heresy?) to reveal the social history behind how this delicacy became a lunch-counter staple in the U.S. and beyond.The authors also interview artisans who’ve perfected the high arts of creating and combining exp

ertly baked Cuban bread, sweet ham, savory roast pork, perfectly melted Swiss cheese, and tangy, crunchy pickles. Tips and expert insight for making Cuban sandwiches at home will have readers savoring the history behind each perfect bite. Publication of this work is made possible by a Sustaining th

e Humanities through the American Rescue Plan grant from the National Endowment for the Humanities.

Sandwich sandwiches進入發燒排行的影片

以原子層沉積法成長二氧化鈦薄膜隨機電阻式記憶體開關特性之研究

為了解決Sandwich sandwiches的問題，作者黃啟賡 這樣論述：

本研究以二氧化鈦薄膜作爲隨機電阻式記憶體的主要研究材料製成Ni/TiO2/BE（Bottom Electrode）的三明治結構的隨機電阻式記憶體。藉由改變元件的底部電極材料、二氧化鈦薄膜的製程溫度與退火環境來研究電極材料、二氧化鈦的結晶程度與氧空位含量對元件開關的影響。并且通過電流電壓特性與薄膜微結構影像來分析元件的傳導機制與開關模型。 在對比鎳與金兩種不同氧活性的金屬材料作爲底部電極元件的開關特性，發現 Ni/TiO2/Au 結構的元件開關次數多于 Ni/TiO2/Ni 結構的元件。解決了Ni/TiO2/Ni 結構因底部電極在製程過程中氧化而產生的整流現象，并且有著更好的耐久度與可靠度。然

而通過提高二氧化鈦薄膜的製程溫度，讓二氧化鈦薄膜形成結晶能夠改善元件的耐久度、開關穩定度與開關效率。同樣發現結晶的二氧化鈦薄膜元件有著比非晶態的二氧化鈦薄膜元件更小的 Vset與 Vreset，優化了元件的能耗。 在對比無退火元件、氧氣環境退火元件與氮氣環境退火元件的開關特性，氧氣環境退火元件有著更高的薄膜電阻，更小的漏電流與更好的試片可開關率。但是存在比其他兩個元件較差的開關穩定性，更大的 Vforming、Vset與 Vreset，以及需要 Forming 的電極數目增加。這源於氧氣退火后，二氧化鈦薄膜中的氧空位減少導致的。氮氣退火后的元件能夠增加二氧化鈦薄膜中的氧空位，能夠有著與氧氣退火

相反的效果。通過分析以上試片的開關特性，並探討了元件的傳導機制與開關模型。不同於氮氣退火元件在高阻態下主要為跳躍傳導的傳導機制，其他元件在高阻態下的傳導機制為肖特基傳導，在低阻態下的傳導機制皆為歐姆傳導。在開關模型上，元件的開關是以氧空位導電細絲的氧化還原反應來控制的電阻變化。從穿透式電子顯微鏡的成像中可以看到在導電細絲上存在來自頂部電極與底部電極的金屬原子，隨著量測次數增加會使得開關厚度變小以及兩端的金屬細絲完全連接頂部電極與底部電極，使得元件完全短路。

Let’s Make a Sandwich

為了解決Sandwich sandwiches的問題，作者Bolte, Mari 這樣論述：

Sandwiches have chewy, yeasty bread, protein-rich meat and cheese, and perfectly crafted condiments. These ingredients can be mixed and matched in endless edible combinations. Learn how to make your own hero sandwich. Then slice it, share it, or wrap it up to save for later! Includes a glossary,

list of sources for further reading, and a recipe with step-by-step instructions.

含鎢非晶銦鋅氧化物半導體於電阻式記憶體 技術之研究

為了解決Sandwich sandwiches的問題，作者甘鎧誌 這樣論述：

Contents_____________________________________摘 要 IAbstract V誌 謝 IXContents XFigure Captions XIITable Captions XVII----------------------------------------Chapter 1 Introduction 11.1 Background 11.2 Overview of Emerging Non-Volatile Memory Technologies 31.3 RRAM for Flexible Electronics

Applications 61.4 Transparent Amorphous Oxide Semiconductor 81.5 Tungsten Doped Amorphous Indium–Zinc Oxide Semiconductor (a-IWZO) 101.6 Motivation and Organization of the Thesis 12Chapter 2 Switching Mechanism of Resistive Switching Random Access Memory 212.1 Electrical characteristics of RRAM 212

.2 Physical Mechanism of RRAM 22Chapter 3 Experiment Instrument and Measurement Setup 303.1 Experiment Instrument 303.2 Electrical measurements 32Chapter 4 Tungsten Doping Effect on the Performance of Indium-Zinc-Oxide RRAM 384.1 Introduction 384.2 Device Preparation 404.3 The Electrical Properti

es of RRAM Devices 414.4 Discussions and Material Analysis 434.5 Summary 46Chapter 5 Performance Enhancement for InWZnO ECM RRAM by Room Temperature Supercritical Fluid Treatment 575.1 Introduction 575.2 Device Preparation 585.3 The Electrical Properties of RRAM Devices 605.4 Discussions and Materia

l Analysis 645.5 Summary 69Chapter 6 Effect of Co Active Electrode on the Electrical Characteristics of InWZnO RRAM 916.1 Introduction 916.2 Device Preparation 926.3 The Electrical Properties and Discussions 936.4 Summary 99Chapter 7 Conclusions 115References 118Vita 148Publication List 149